Graphene oxide‐based non‐volatile organic field effect memory transistors

Abstract

To produce organic non-volatile organic memory transistors, graphene oxide (GO) nanoparticles were embedded in the floating gate of an all organic memory structure using polymethylmethacrylate as the dielectric and pentacene as the organic semiconductor. The current–voltage characteristics and the memory behaviour of the GO-based organic thin film memory transistors are reported. GO-based memory transistors were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics and shifts in the threshold voltage of the transfer characteristics were attributed to the charging and discharging of the floating gate. Fast switching and large memory windows (∼26 V) exhibiting high charge density (6.25 × 1012 cm−2) were achieved.