Abstract
Both BiFeO3/Bi3.15Nd0.85Ti3O12 (BNdT) bi-layers and BiFeO3 thin films were grown on Pt/Ti/SiO2/Si by the sol–gel method. While just a nearly linear dielectric response was observed in the BiFeO3 film, the BiFeO3/BNdT bi-layers exhibited a saturated ferroelectric hysteresis loop with a large remanent polarization (2Pr = 72 µC cm−2). This 2Pr value is also much higher than that (∼20 µC cm−2 reported previously) of BNdT films. The large remanent polarization of bi-layers results dominantly from the giant polarization of the BiFeO3 layer performed under an actual field of 607.4 kV cm−1 when the BNdT layer acts as an insulating barrier, leading to almost a ten times increase in the breakdown field of the BiFeO3 layer.
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