Abstract
In this study, static induction transistors (SITs) with beta gallium oxide (β-Ga2O3) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga2O3 films are subjected to UV/ozone treatment, which results in reduced oxygen vacancies in the X-ray photoelectron spectroscopy data, lower surface roughness (3.51 nm) and resistivity (319 Ω·cm), and higher mobility (4.01 cm2V−1s−1). The gate leakage current is as low as 1.0 × 10−11 A at VGS = 10 V by the depletion layer formed between n-Ga2O3 and p-epi SiC at the gate region with a PN heterojunction. The UV/O3-treated SITs exhibit higher (approximately 1.64 × 102 times) drain current (VDS = 12 V) and on/off ratio (4.32 × 105) than non-treated control devices.
Highlights
Among the different polytypes of Ga2 O3 (α, β, γ, δ, and ε), monoclinic Ga2 O3 is the most thermally stable and can be obtained by annealing sputtered films [1,2,3,4] because metastable Ga2 O3 can be subsequently converted into β-Ga2 O3 after high-temperature annealing
We demonstrate static induction transistors (SITs) fabricated by depositing n-type Ga2 O3 on an epitaxially grown layer of p-type 4H-silicon carbide (SiC) on an n-type 4H-SiC substrate
Ga2 O3 films were deposited by radio frequency (RF) sputtering of a Ga2 O3 (99.99% purity) target
Summary
Among the different polytypes of Ga2 O3 (α, β, γ, δ, and ε), monoclinic Ga2 O3 is the most thermally stable and can be obtained by annealing sputtered films [1,2,3,4] because metastable Ga2 O3 can be subsequently converted into β-Ga2 O3 after high-temperature annealing. 4.8–5.1 eV and has drawn considerable attention for use in various applications such as highpowered semiconductor devices, ultra-violet (UV) detectors, and gas and fire sensors [5,6,7,8,9,10]. It exhibits an n-type conductivity that does not require intentional doping due to inherent oxygen vacancies in the grown crystal, as in the case of ZnO or InGaZnO (IGZO) [11,12]. Ga2 O3 SIT structures have been formed by using GaN, which
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