Improved Distribution of Resistance Switching Through Localized Ti-Doped NiO Layer With InZnOx/CuOx Oxide Diode

Abstract

Asymmetric sized single oxide diode (InZnOx/CuOx) with single resistor (Ti-doped NiO) device (1D-1R) was integrated into a crossbar array at room temperature to provide high current through the diode while keeping resistance switching localized in a small area. The Ti (0.1 wt %) doped NiO layer was fabricated inside an inverted cone-structure to localize switching and improve general device performance. We were able observe resistance switching up to around 100 cycles in the 1D-1R structure. In addition, the addition of the diode to the structure acted as an external resistance suppressing overflow current during Ti-doped NiO switching from a high resistance state to a low resistance state, thus improving switching distribution in both low (average = $3.2\times 10^{-5} \Omega $ , standard deviation = $1.3\times 10^{-6} $ ) and high (average = $2.8\times 10^{-6} \Omega $ , standard deviation = $6.7\times 10^{-7}$ ) resistance states.