Abstract
We report a novel Si/Si1-xGex channel with improved current drivability and reliability using a buried Si0.99C0.01. It is also found that the Si/Si1-xGex/Si0.99C0.01 structure is effective in reducing Ge out-diffusion which helps to improve gate dielectric interface quality.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
