Abstract
P+-n diodes with shallow junctions less than 50 nm deep were formed utilizing single pulse excimer laser annealing. The diode characteristics and the crystallinity near the junctions was investigated and it was found that the characteristics were improved by annealing the sample at 600° C for 1 h prior to excimer laser annealing. A low leakage current density of ≤10 nA/cm2 under reverse bias and ideal I–V curves of 60 mV/dec. over 7 decades under forward bias were obtained. The average leakage current and the device to device leakage current fluctuation were both reduced when the pre-annealing was used. The crystallinity near the junction was investigated by cross sectional transmission electron microscopy (TEM).
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