Abstract
In this work, we study excimer laser annealing (ELA) on phosphorus-implanted germanium with implantation energies and doses of 30 keV, 5×1015 cm-2, and 10 keV, 5×1014 cm-2, respectively. A lower specific contact resistivity of Al/n+Ge and better performance of Ge n+/p diode than that obtained by rapid thermal annealing have been fulfilled. Moreover, by a combination of low temperature pre-annealing (LTPA) and ELA, we achieved a Ge n+/p diode with a rectification ratio of about 107 and decreased phosphorus diffusion in Ge during ELA. A increased activation concentration up to 6×1019cm-3 with a high activation ratio about 85% of phosphorus have been achieved in a low ion implanted dose and energy.
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