Abstract
SiNx interlayer was introduced in the epitaxial process of (11 2‾2) AlGaN film, and the influences of SiNx on the properties of (11 2‾2) AlGaN were characterized. It was revealed that the morphologic properties and crystal quality of (11 2‾2) AlGaN could be refined remarkably by optimizing SiNx growth time. Especially, a low root mean square value of 1.02 nm was obtained for S3 with a SiNx growth time of 10 min, which was 56.7 % less than S0 that grown without SiNx. Meanwhile, compared with S0, the full width at half maximum values of X-ray rocking curves for S3 were reduced by 39.6 % along [11 2‾3‾] direction and 41.2 % along [1 1‾00] direction. Besides, the background electron concentration and basal stacking faults related emission of (11 2‾2) AlGaN could also be suppressed remarkably by optimizing SiNx growth time to 10 min. These improvements could be originated from the formation of SiNx islands, leading to the lateral growth of AlGaN overlayer, the relaxation of strain in the AlGaN, and the annihilation of dislocations.
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