Abstract
Scanning capacitance microscopy (SCM) has been gaining attention for its capability to measure local electrical properties in doping profile, oxide thickness, trapped charges and charge dynamics. In many cases, stray capacitance produced by different samples and measurement conditions affects the resonance frequency of a capacitance sensor. The applications of conventional SCM are critically limited by the fixed operating frequency and lack of tunability in its SCM sensor. In order to widen SCM application to various samples, we have developed a novel SCM sensor with variable operating frequency. By performing variable frequency sweep over the band of 160 MHz, the SCM sensor is tuned to select the best and optimized resonance frequency and quality factor for each sample measurement. The fundamental advantage of the new variable frequency SCM sensor was demonstrated in the SCM imaging of silicon oxide nano-crystals. Typical sensitivity of the variable frequency SCM sensor was found to be 10 −19 F/V.
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