Abstract
n-ZnO/HfO2/p-GaN based heterojunction light emitting diodes were fabricated using a radio frequency magnetron sputtering system. The electroluminescence measurements revealed that dominant violet emissions centered at around 415 nm were emitted and improved performances were observed for the devices with the HfO2 intermediate layer; the color of the devices could be tuned from violet (0.18, 0.10) to cold white (0.22, 0.20) by varying the Ar/O2 flow ratio during the deposition of HfO2, which are probably ascribed to the deep level emission bands in ZnO. The results were studied by peak-deconvolution with Gaussian functions and were discussed in terms of band diagram of the heterojunctions.
Published Version
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