Abstract
Different aluminum-doped ZnO (AZO)/metal composite films, including AZO/Al, AZO/Ag/Al and AZO/Ag/NiCr/Al, were utilized as the back reflectors for p-i-n hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells. It was found that AZO/Al had a better performance than single Al electrode and the thickness of AZO film could strongly affect the short-circuit current density (Jsc) of the solar cells. However, AZO/Ag/Al, which was expected to improve the back reflectance further, gave out a bad effect, due to the inter diffusion of Ag and Al. While a nickel–chromium (NiCr) film was inserted between Ag and Al as a diffusion barrier, the highest Jsc was achieved. So AZO/Ag/NiCr/Al could be utilized as an improved AZO/metal back reflector for p-i-n a-SiGe:H solar cells.
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