Abstract

This paper presents the ability of floating gate MOSFET (FGMOS) threshold voltage to be programmed or tuned which is exploited to improve the performance of electronic circuit design. This special characteristic owns by FGMOS is definitely contributes towards low voltage and low power circuit design. The comparison of threshold voltage between FGMOS and conventional NMOS is done in order to prove that FGMOS is able to produce a lower threshold voltage compared to conventional NMOS. In addition, in this paper, an implementation of FGMOS into inverter circuit is also done to show the programmability of FGMOS threshold voltage. The operations of the inverter circuits are verified using Sypnopsys simulation in 0.1μm CMOS technology with supply voltage of 1.8V.

Highlights

  • The vast progress of portable electronic devices has encouraged further studies on low voltage and low power analog circuit design

  • Low voltage supply circuit is able to be realized by implementation of floating gate MOSFET (FGMOS) in which it offers the capability of tuning the effective threshold voltage [8],[6],[2],[15]

  • We have studied the special advantage of FGMOS, in which it owns the ability to be programmed through the tuning of the threshold voltage

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Summary

Introduction

The vast progress of portable electronic devices has encouraged further studies on low voltage and low power analog circuit design. To achieve low voltage and low power circuit design, a distinct number of techniques have been approached by researchers, such as bulk-driven, self-cascode, current mirror, and floating gate MOSFET (FGMOS) techniques [1]–[14]. Low voltage supply circuit is able to be realized by implementation of FGMOS in which it offers the capability of tuning the effective threshold voltage [8],[6],[2],[15]. With the ability to tune and scale down the effective threshold voltage, the supply voltage required to operate the circuit is decreased [15]. Another advantage of FGMOS technique is that it is compatible in all CMOS circuit design. Making it possible to reduce the value of Vth(eff) that contributes towards low voltage and programmable electronic devices [2]

Comparisons of FGMOS and NMOS
Conclusions
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