Abstract
Today any real progress in solar cell conversion efficiency necessitates new device concepts, new materials (with global and local modifications), new technological approaches and development. Very promising results have been obtained by ion implantation of Si conjugated with an adequate thermal treatment. In this paper an example of doping impurity implantation for a multi-interface emitter formation is presented. This approach allows simultaneous formation of: i) an inserted layer with amorphized structure and two hetero-interfaces of the α-Si c-Si type, ii) a doping-impurity profile of the emitter, iii) a collecting PN junction and iv) a post implantation defect gettering. One of the more important questions concerns the structural, optical and electronic quality of α-Si c-Si buried interfaces. This aspect has been carried out by an investigation of implantation conditions (energy, dose, temperature) and of the thermal treatment that forms definitively the buried nanostructure and its solid epitaxy neighborhood. The simplified devices with inserted sub-structures have been characterized by three types of techniques: structural (RBS, Raman spectroscopy), physico-chemical (SIMS) and electrical (spreading resistance profile).
Published Version
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