Impacts of Cavity Thickness and Insulating Material on Dielectric Modulated Trench Junction-less Double Gate Field Effect Transistor for Biosensing Applications

Abstract

Introduction: This work represents the influence of gate dielectric, and the nano-cavity gap of a dielectric modulated trench gate Junction-less Double Gate Field Effect Transistor (JL-DGFET) on the different performance indicators is investigated considering the Low-Frequency Noise. Methods:: It is noted that the gate dielectric and the nanogap, both parameters, have a substantial influence on the sensing capacity and performance of noise of the device. Results:: A double gate suitable dielectric material and cavity thickness can effectively improve the biosensor’s sensitivity with a minimum amount of noise. Conclusion:: The sensitivity is found to increase up to 9.5 for dielectric constant, k = 3.57 and 6.5 for dielectric constant, k = 2.1.