Abstract
Background: Sm (Er) doping is an effective strategy for enhancing the photocatalytic activity of the semiconductor photocatalysts for the degradation of organic pollutants. BaSnbased nanorods possess wide band gap energy, which limits the photocatalytic application. It is important to research the feasibility of the improved photocatalytic performance of the BaSnbased nanorods by doping with Sm (Er). Objective: The aim is to synthesize Sm (Er)-doped BaSn-based nanoscale materials through a simple hydrothermal process and research the photocatalytic performance of the Sm (Er)-doped BaSn-based nanoscale materials for the gentian violet degradation. Methods: Sm (Er)-doped BaSn-based nanoscale materials with a polycrystalline structure were synthesized through a simple hydrothermal process. The Sm (Er)-doped composites were analyzed by X-ray diffraction, electron microscopy, solid diffuse reflectance spectrum, X-ray photoelectron spectroscopy, photoluminescence, and electrochemical impedance spectroscopy. Results: Sm (Er) doping induces the morphological evolution of the BaSn-based nanoscale materials from the nanorods to irregular nanoscale particles. Sm (Er) in the doped BaSn-based nanoscale materials exists in the form of the cubic Sm2Sn2O7 and orthorhombic ErF3 phases. The band gap value is decreased with increasing the Sm (Er) dopant contents. Sm (Er)-doped BnSnbased nanoscale materials with the Sm (Er) content of 8wt.% have the lowest band gap and show the strongest light absorption ability. Compared with the un-doped BaSn-based nanoscale materials, the Sm (Er)-doped BnSn-based nanoscale materials exhibit higher photocatalytic activity for the gentian violet degradation. 8wt.% Sm-doped BnSn-based nanoscale materials show the highest photocatalytic activity for the degradation of the gentian violet. 20 mL gentian violet solution (concentration of 10 mg·L-1) can be totally degraded using 20 mg 8wt.% Sm-doped BnSnbased nanoscale materials under UV light illumination for 150 min. Conclusion: The enhanced photocatalytic activity of the Sm (Er)-doped BnSn-based nanoscale materials can be attributed to the decreased band gap, enhanced light absorption ability, and decreased recombination of the photo-generated electron-hole pairs.
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