Impact of two gate oxide with no junction metal oxide semiconductor field effect transistor- an analytical model

Abstract

Abstract An analytical model based on physics is used to describe the potential distribution, horizontal electric field, and drain current of Two Gate Oxide with no junction MOSFET (TOX-NOJ-MOSFET) was investigated for cylindrical shape structure. The Poisson equation is used to derive the expression for cylindrical coordinate system which relies on parabolic approximation method. The combination of high k two gate oxide stack and junctionless transistor with Dual material Double gate structure performs a major role to diminish the short channel effects, propelled to increase the ION current (10−5A/μm) and decrease the leakage current IOFF of 10−14 A/μm to enhance ION/IOFF ratio to 109. To ensure the scalability and responsiveness of the system numerical simulations have been performed with various bias voltages and gate length ratios using Synopsys TCAD software and the results were well matched with analytical solutions.