Impact of thermally -aware environmental conditions on double gate carbon nanotube FET

Abstract

In this paper, a temperature dependent analytical model of double gate carbon nanotube field effect transistor (DG-CNTFET) has been developed to evaluate the performance of DG-CNTFET under variable thermal environmental conditions. Using the developed model, I–V characteristics of DG-CNTFET have been obtained by nano-TCAD ViDES (nano-Technology Computer Aided Design ViDES) simulator. Further, the effect of temperature on other performance parameters such as output characteristics, ON current, OFF current, subthreshold swing and drain conductance have also been obtained for a temperature ranging from 250 K to 350 K. It has been observed that with increase in temperature, drain current rises which further influence the I–V characteristics of DG-CNTFET. From results, it is revealed that the ON current and drain conductance of DG-CNTFET gets increased with variable temperature. Further, it is also presented in paper that subthreshold swing is also increased under variable thermal environment conditions.