Impact of the channel doping on the low-frequency noise of silicon vertical nanowire pFETs

Abstract

In this work, the impact of the channel doping on the low-frequency noise of silicon Gate-All-Around (GAA) Vertical Nanowire (VNW) pMOSFETs on Silicon-on-Insulator (SOI) substrates will be described and discussed. It is demonstrated that the dominant fluctuation mechanism of the 1/f noise in weak inversion changes from mobility (Δμ) to number (Δn) fluctuations with increasing doping density of the silicon nanowires. At the same time, the lowest input-referred voltage noise Power Spectral Density is observed for an intermediate boron concentration of 5 × 1018 cm−3.