Abstract
Ultra Thin Body Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors (UTB-SOI-MOSFETs) provide better immunity to Short Channel Effects (SCEs). But the behaviour changes at miniaturization and still the many unexplored effects need to be analysied. Here in this paper, Drain Induced Barrier Lowering (DIBL) and sub-threshold Slope (SS) variation of a n-channel UTB-SOI-MOSFET have been analyzed by changing the device structural aspects like gate length (LG), BOX thickness (tBOX) and Silicon film thickness (tSi). Also, the effect of intrinsic parameters as metal gate work function and channel material variation on DIBL and sub-threshold Slope (SS) variation has been analyzed.
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