Abstract
Bias voltage scan rate and mobile ion concentration have a strong influence in <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J-V</i> curves of metal halide perovskite-based memristors. In addition to hysteresis, in some cases <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J-V</i> curves also show an anomalous drop in current known as negative differential resistance. This feature is usually related to electrochemical reactions between the reactive metal and I <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> ions, and to air exposure. However, in devices with low-reactive electrodes, its origin is still under debate. In this work, we propose a theoretical model based on ionic-electronic drift-diffusion. This model sheds light into the ionic-electronic processes that shape hysteresis, and it helps to explain the appearance and evolution of a negative resistance in memristors with low-reactive contacts and capacitive hysteresis. Finally, experimental <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J-V</i> curves are presented to validate the proposed model.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
