Abstract
In this paper, surface potential model of Reconfigurable Ferroelectric Field Effect Transistor (R-Fe-FET) is presented to study the impact of ferroelectric layer and metallic- NiSi 2 doped Source/ Drain (S/D) regions. The analytical model is derived by solving 1-D Poisson's equation in cylindrical coordinates and Landau - Khalatnikov equation to obtain various electrical characteristics. A comparative analysis of the proposed device and the conventional Reconfigurable Field Effect Transistor (R-FET) has been done to investigate the efficacy of the proposed device for improved device performance. It has been shown that with proper optimization of ferroelectric layer thickness, subthreshold swing (SS) as low as 11.7mV/dec can be achieved for R-Fe-FET which signifies the suitability of the device for ultra- low voltage/power digital circuit design applications including switches and memories.
Published Version
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