Abstract
In this paper, drain current model of Reconfigurable Ferroelectric Field Effect Transistor (R-Fe-FET) is derived by solving current - continuity equation in cylindrical coordinates and using Landau - Khalatnikov equation. The model assumes gradual - channel approximation and by modulating the drain bias, the proposed device can operate either in an n-FET mode or in p-FET mode. Further, due to the presence of ferroelectric layer, the device offers superior electrical characteristics including I-V, transconductance and drain conductance over the conventional Reconfigurable Field Effect Transistor (R-FET). Thus, the proposed device finds extensive use in low-power analog/digital circuit design applications.
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