Abstract
This letter investigates the impact of quantum confinement (QC) on the short-channel effect (SCE) of ultrathin-body (UTB) and thin-buried-oxide germanium-on-insulator (GeOI) MOSFETs using an analytical solution of Schrodinger equation verified with TCAD simulation. Our study indicates that, although the QC effect increases the threshold voltage (Vth) roll-off when the channel thickness (Tch) is larger than a critical value (Tch,crit), it may decrease the Vth roll-off of GeOI MOSFETs when the Tch is smaller than Tch,crit. Since Ge and Si channels exhibit different degrees of confinement and Tch,crit, the impact of QC must be considered when one-to-one comparisons between UTB GeOI and Si-on-insulator MOSFETs regarding the SCE are made.
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