Abstract
This work investigates the impacts of quantum confinement on the short-channel effect and band-to-band-tunneling (BTBT) of UTB Ge and InGaAs NMOS devices using derived analytical solution of Schrödinger equation verified with TCAD simulation. Our study indicates that, when the channel thickness (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ch</sub> ) is smaller than a critical value (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ch, crit</sub> ), the quantum confinement effect may decrease the threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) roll-off. Therefore, Ge and InGaAs devices may exhibit better V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> roll-off than the Si counterpart because of more significant quantum confinement. The scaling of T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ch</sub> will also increase the effective bandgap due to quantum confinement and hence decrease the BTBT leakage in the Ge and InGaAs devices.
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