Abstract
This paper investigates the impact of backgate bias (Vbg) on the sensitivity of threshold voltage (Vth) to process and temperature variations for ultra-thin-body (UTB) GeOI and InGaAs-OI MOSFETs. Our study indicates that the quantum-confinement effect significantly suppresses the Vbg dependence of the Vth sensitivity to process and temperature variations. Since Si, Ge, and InGaAs channels exhibit different degrees of quantum confinement, the impact of quantum confinement has to be considered when one-to-one comparisons among hetero-channel UTB devices regarding variability are made. Our study is crucial to the robustness of multi- Vth designs with advanced UTB technologies.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: IEEE Transactions on Device and Materials Reliability
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.