Impact of P-type doping and channel length on the performance of 2D SiC MOSFET

Abstract

The performance of monolayer two-dimensional SiC MOSFET with various concentration of p-type doping in source/drain region and various lengths of channel were investigated based on the density-functional theory method. All MOSFETs could realize dynamic turn-off. The maximum ON-state current were up to 1152.8 μA/μm and 1731.4 μA/μm for 4.1 nm and 5.1 nm SiC MOSFET with 5 × 1020 cm−2 doping concentration, respectively, which could satisfy the requirement of the high-performance devices outlined by ITRS for production year 2028. In addition, the various parameters (transmission spectra, the intrinsic gate capacitance and so on) of MOSFETs were studied. Moreover，the LDOS and spectral current under ON-state voltage were researched to further explore the physical mechanism of the MOSFETs. Furthermore, the study found that the current increased as the temperature increasing, the current value and the temperature difference between left and right electrode at the fixed bias voltage and gate voltage were not related.