Abstract
For the p-Si, n-Si and n/p +-Si MOS tunnel diodes with a sub-3 nm insulator layer, the interrelation between oxide degradation, changes in current–voltage curves and changes in the luminescence spectra, is experimentally studied. The evolution of the spectra is associated with the changes in carrier transport through the SiO 2 and consists in a suppression of the high-energetic radiation. In some devices (n-Si), the post-stress redistribution of applied voltage within a MOS structure as a whole, was observed. In the perspective, screening the measured luminescence spectrum with the reference spectrum simulated for an undamaged structure, conclusions can be made as to whether the oxide layer is in order or degraded.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
