Abstract
Circuit-level models are developed to determine the upper bound on the performance of a 3-D IC link with through silicon vias (TSVs). It is shown that the performance of a 3-D link is limited not only by the on-chip interconnect RC, driver resistance, and TSV capacitance, but also by the current carrying capacity of the on-chip wires connecting the TSV to the input/output (I/O) driver. The models developed in this paper are used to optimize the I/O driver size, the number of on-chip wires connecting the TSV to the driver, and the data-rate to maximize the aggregate bandwidth per unit energy. Furthermore, in order to maximize the aggregate bandwidth of a 3-D link, it is shown that splitting the TSV array into smaller subarrays and placing the I/O drivers closer to the TSVs is better compared with having large TSV arrays.
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