Impact of gate coupling and misalignment on performance of double-gate organic thin film transistors

Abstract

This paper proposes a numerical simulation of the dual-gate organic thin film transistors (DG-OTFTs). It is revealed that electrically separable double-gate architecture is able to dynamically control the threshold voltage by the coupling of the top/bottom gates. We also observe that the device characteristics are sensitive to the misalignment and the moving direction between top/bottom gates. A significant change to the driving ability and threshold voltage is found while misalignment exists. As the misalignment is larger, the driving-current reduces and threshold voltage increases quickly. Also the degradation is severe while the mismatch is moved to drain and relaxed with large channel length.