Abstract

This paper presents a numerical simulation of the electrically separable dual-gate organic thin film transistors (DG-OTFTs). It is revealed that double-gate architecture is able to dynamically control the threshold voltage by the coupling of the top/bottom gates, and the threshold voltage was insensitive to the thickness of the active layer. The contact resistance of staggered OTFTs is decreased with thinner organic semiconductor layer thickness. We also observe that the device characteristics are sensitive to the misalignment, and the significant change of the driving ability and threshold voltage is also observed while misalignment exists.

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