Abstract
We present a theoretical study of modulation instability (MI) in silicon-on-insulator (SOI) nano-waveguides in the presence of exponential saturable nonlinearity (SNL). The study incorporates two-photon absorption and free-carrier effects in the normal dispersion regimes at telecommunication wavelength. Also, we have shown the impact of SNL on the power dependence of MI gain spectra, and carrier density. Further, the effects of carrier lifetime and fourth order dispersion on MI gain spectra have been discussed in the presence of SNL.
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