Abstract
We present an investigation of the impact of two-photon absorption and free-carrier effects on modulation instability (MI) in silicon-on-insulator (SOI) nano-waveguide. We have analyzed nano-waveguide with both the anomalous and the normal group velocity dispersion (GVD) parameters at telecommunication wavelength. The power dependence of MI gain spectra in these waveguides has been explored. Also, we have studied the nonlinear losses and carrier density in the two dispersion regimes. Further, the impact of carrier lifetime on the MI gain spectrum is discussed in detail.
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