Abstract
All-inorganic perovskite QDs, such as CsPbX3(X = Cl, Br, I), have garnered significant attention in the field of optoelectronics as emerging photonic materials. Rare-earth (RE) doping is an effective strategy for enhancing the optical properties of CsPbX3 perovskite quantum dot glasses. Therefore, investigating the crystallization behavior of rare-earth ion-doped CsPbX3 glass and the energy transfer mechanisms between rare-earth ions and CsPbX3 is crucial for advancing the development of rare-earth-doped perovskite glass materials. The paper systematically introduces the preparation methods, structural characteristics, and applications of CsPbBr1.5Cl1.5 QDs in optoelectronic devices. Firstly, the detailed effects of Eu3+ and F⁻ doping on the structure and optical properties of CsPbBr1.5Cl1.5 quantum dot glass are discussed. Subsequently, the crystal structure, size distribution, and morphology of CsPbBr1.5Cl1.5 QDs are characterized using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Furthermore, the application of CsPbBr1.5Cl1.5 QDs in LEDs and temperature sensing optoelectronic devices is explored, highlighting their performance and potential value in these applications. This study provides important references and guidance for further research and application of CsPbBr1.5Cl1.5 QDs in the field of optoelectronics.
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