Abstract

Recently, cesium lead bromide perovskite glass has been recognized as a potential material to fabricate green light emission devices because of their high stability and excellent optical performance. However, the low photoluminescence efficiency and poor color purity ($\lt\! 525\,\,{\rm nm}$) of ${{\rm CsPbBr}_3}$ quantum dot (QD) glass restricts its practical application. In this work, self-crystallization ${{\rm CsPbBr}_3}$ QD glasses are successfully prepared via the melt quenching method, and the photoluminescence efficiency increases 10-fold compared with regular thermal treatment ${{\rm CsPbBr}_3}$ QD glass without ${\rm Ag}^+$ doping. The green light-emitting devices based on bulk self-crystallization ${{\rm CsPbBr}_3}$ QD glass with 0.4 mol.% ${\rm Ag}^+$ doping achieves a luminescence efficiency of 20.85 lm/W with a CIE (0.2084, 0.6026) under a 20 mA driving current. The present results provide new, to the best of our knowledge, insight into the application of ${{\rm CsPbBr}_3}$ QD glass in the optoelectronic field.

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