Impact of disorder outside theCuO2planes of electron-doped superconductors: Different effect on localization andTcbetween Gd and Sm doping

Abstract

The thermopower $S(T)$, Hall coefficient ${R}_{H}$, and resistivity $\ensuremath{\rho}(T)$ are studied for ${\text{Nd}}_{1.85\ensuremath{-}x}{M}_{x}{\text{Ce}}_{0.15}{\text{CuO}}_{4\ifmmode\pm\else\textpm\fi{}\ensuremath{\delta}}$ ($M=\text{Gd}$ and Sm) single crystals. Disorder is introduced into the cation sites outside the ${\text{CuO}}_{2}$ planes in the two systems and its degree is controlled by changing $M$ content. Such doping nominally does not change the doped carrier density, which is confirmed by ${R}_{H}$. $S(T)$ is analyzed in terms of a semiempirical model above 120 K for both doping, which assumes the coexistence of a narrow electron band and a broad one. In this model, both the bandwidth for the density of states and the bandwidth of the effective conductivity broaden with increasing $x$ for both doping, while the tendency for localization is increased for Gd doping but nearly unchanged for Sm doping, which could be understood by stronger electronic disorder for Gd doping than that for Sm doping. This may be resulted from the difference in ionic radius $({\text{Gd}}^{3+}<{\text{Sm}}^{3+}<{\text{Nd}}^{3+})$. Furthermore, for Gd doping the superconducting ${T}_{c}$ is strongly depressed with increasing the doping concentration, while for Sm doping ${T}_{c}$ is nearly unchanged with increasing Sm content, which implies that the superconducting ${T}_{c}$ may be related to the localization and the band structure of the itinerant carriers.