Abstract
The effects of Gd and Sm substitution on the Nd 1.85−xLn xCe 0.15Cu 4±δ (Ln=Gd and Sm) single crystals have been studied by the X-ray-photoelectron spectroscopy (XPS) and resistivity measurements. It is found that such doping nominally does not change the doped carrier density, which is supported by a constant result of the ( I S / I M ). Gd doping leads to a weakness in the density of states at the Fermi level for superconducting Nd 1.85− x Gd x Ce 0.15Cu 4±δ, while this phenomenon is not observed for Nd 1.85− x Sm x Ce 0.15Cu 4±δ. This could have been resulted from the fact that Gd doping induces more localization than Sm doping does, and more localization may result in the suppression of T C for Gd doping and this has been observed with the resistivity measurements.
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