Abstract
In this work, GaAs solar cell has been analyzed by using PC1D simulation software. Optimization of thickness and doping concentration of emitter and absorber layer of solar cell is done. Effect of front and rear surface recombination velocity is analyzed in this work. When surface recombination velocity increases, the value of efficiency decreases due to increase in recombination process. The optimum value of surface recombination velocity are Sn = Sp = 102 cm/s. Front surface reflection is minimized by the use of TiO2 single layer ARC and double layer LiF/HfO2 ARC. Increase in efficiency around 2.71% is achieved as compared to cell without ARC after applying anti-reflection coating of optimum thickness. Simulation results shows GaAs solar cell with efficiency of 26.68%.
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