Abstract
A sol-gel-processed ZrO2 layer was used as an active layer for a resistive random-access memory (RRAM). With top Ag electrodes, the fabricated devices show conventional bipolar switching memory properties. The impacts of device size and ZrO2 film thickness on device performance were investigated. The scaling of the device area and the successful increase in ZrO2 film thickness increased the high-resistance state (HRS)/low-resistance state (LRS) ratio values and improved the non-volatile memory properties, such as retention and endurance. The fabricated ITO/ZrO2/Ag RRAM shows good retention and endurance properties. The HRS and LRS were found to last for 104 s without any significant degradation.
Published Version
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