Abstract
Resistive-switching memories stacked in a metal–insulator–metal (MIM) like structure have shown great potential for next generation non-volatile memories. In this study, ceria based resistive memory stacks are fabricated by implementing different sputter conditions (temperatures and powers). The films deposited at low temperatures were found to have random grain orientations, less porosity and dense structure. The effect of deposition conditions on resistive switching characteristics of as-prepared films were also investigated. Improved and reliable resistive switching behaviors were achieved for the memory devices occupying less porosity and densely packed structures prepared at low temperatures. Finally, the underlying switching mechanism was also explained on the basis of quantitative analysis.
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