Abstract
With different device doping options in fully depleted silicon-on-insulator (FDSOI) metaloxide semiconductor field effect transistor (MOSFET) channel and under different bias conditions the low frequency noise level can be manipulated and optimized. We demonstrated a noise level dependence on different channel device doping options and a lowering of gate input voltage (SVG) with different back gate voltages (Vb) in n-type metal-oxide semiconductor (NMOS) and p-type metal-oxide semiconductor (PMOS) structures.
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