Abstract
High mobility ultrathin-body GeOI MOSFETs with improved interfacial quality of the buried oxide interfaces are demonstrated in this study. We have realized these devices by flipping the Smart-Cut™ GeOI substrates with MOS interface passivation, directly bonding them to a Si substrate, removing the supporting Si substrate of the Smart-Cut™ GeOI and thinning the flipped GeOI films. The electrical properties of ultrathin-body GeOI MOSFETs with different Ge/BOX back interfaces and the GeOI thickness dependence have been evaluated in order to study the impact of the back interface passivation on the electrical properties. It is found that the hole mobility of the flipped GeOI is higher at a given GeOI thickness than that of the original GeOI thanks to the improvement of the back interfacial quality.
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