Abstract
Here, we report the impact of a surface TiO2 atomic sheet on the electronic transport properties of LaAlO3/SrTiO3 heterointerfaces. We demonstrate that when a LaAlO3 film is deposited on a reconstructed SrTiO3(001)-(13×13)-R33.7° substrate, the critical thickness of the LaAlO3 film for emergence of high-mobility electrons is two unit cells. In addition, we observe that as a result of surface passivation by the TiO2 atomic sheet, an electron density of 2.0 × 1014 cm−2 is maintained at the interface owing to the suppression of electron transfer to the surface. A combination of scanning transmission electron microscopy and photoemission spectroscopy reveals that the TiO2 sheet on LaAlO3 plays a key role in determining the conducting properties. This study demonstrates the importance of surface terminations to the electronic structures of buried interfaces.
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