Abstract
It is shown experimentally for the first time that the operation of GaAs drift step-recovery diodes produced on the basis of p + - p 0 - n 0 - n + is accompanied by the generation of ultrahigh-frequency oscillations in the form of trains of short pulses with a duration of ~10 ps. The amplitude and repetition frequency of these pulses are as high as ~100 V and ~(10-100) GHz, respectively. The phenomena of delayed reversible wave breakdown and excitation of ultrahigh-frequency oscillations in the structures of GaAs step-recovery diodes are found to open up new avenues for progress both in the physics and technology of semiconductor devices based on GaAs structures and in the technology of ultrahigh-frequency systems and devices that deal with pulsed sig- nals of picosecond-scale duration. © 2003 MAIK "Nauka/Interperiodica".
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