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https://doi.org/10.1049/el:19950257
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Cite Journal: Electronics Letters |  Publication Date: Mar 2, 1995 |
 Citations: 2 |
A new theory of impact ionisation recently developed by the author is applied to breakdown in Si pin diodes and collectors of advanced bipolar transistors. Nonlocal aspects dominate the ionisation on short length scales, and good agreement is achieved between the theory and published breakdown and multiplication data.
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