Abstract
This study focuses on the impact of the emitters on the forward voltage drop (which affects the heat generation) in Si and 6H-SiC PIN 5kV diodes. The influence of the Shockley-Read-Hall (SRH) lifetime on the forward voltage drop was investigated. It was found that the forward voltage drop of the 5kV Si diode depends much stronger on the SRH lifetime than the 5kV SiC diode. The influence of minority carrier transport in the highly doped emitters on the forward voltage drop in 5kV Si and SiC PIN diodes was quantified. Additionally, two-dimensional simulations of a mesa-etched 5kV PIN diode in 6H-SiC show a large impact of anisotropy on the forward voltage drop at high current densities. These simulations indicate that large advantages with respect to forward voltage drop could be achieved in mesaetched 5kV SiC PIN diodes by choosing the substrate in a direction parallel to the c-axis. This result is interesting since most substrates commercially available today have the polished surface perpendicular to the c-axis.
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