Abstract
Abstract Atomic force microscopy (AFM) is used in tapping mode in order to study the roughness created in the crater bottom during secondary ions mass spectrometry (SIMS) analysis in silicon, using O 2 + primary ions without flooding. Previous studies of the chemical composition of the facets created during the analysis have lead to the conclusion that the facets oriented toward the O 2 + beam during the ionic bombardment were close to SiO 2 in composition, while the facets hidden from the beam were covered with a sub-stoichiometric oxide SiO x (with x 2 due to the different properties of the materials (hardness, adhesion, etc.). As a comparison, an observation of a surface covered with SiO 2 and Si (SiO 2 deposed with a 90 nm or 4 nm thickness, and partially removed from a Si surface) shows the same kind of contrast.
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