Imaginary impedance due to hopping phenomena and evaluation of dopant ionization time in cryogenic metal-oxide-semiconductor devices on highly doped substrate

Abstract

Abstract MOS capacitors fabricated on substrates with doping concentrations as high as 1018 cm-3 were characterized at 4.2 K. The highly doped substrate exhibited an intrinsic imaginary component of impedance at 4.2 K. The imaginary component is attributed to the time delay induced by hopping phenomena, leading to a decrease in the gate capacitance. Furthermore, we investigated the time constant associated with dopant ionization under depletion conditions and determined it to be 0.35 μs. An equivalent circuit model of the highly doped substrate at 4.2 K is also shown.