Comparative analysis of GaN based MOSHEMT devices for RF applications

Abstract

In this paper the behavior of Gate Capacitance with the nanoscale variation of barrier thickness in Gallium Nitride (GaN) based metal oxide semiconductor High electron mobility transistor (MOSHEMT) is presented. The Gate Capacitance has been calculated for Aluminum Nitride/Gallium Nitride (AlN/GaN) and Aluminum Indium Nitride/Gallium Nitride (AlInN/GaN) MOSHEMT through TCAD simulation. AlN/GaN MOSHEMT has an advantage of significant decrease in gate capacitance with increase in barrier thickness compared to AlInN/GaN MOSHEMT. This decrease in gate capacitance leads to improve the RF performance and hence reduce the propagation delay.