Abstract

In this paper, a comparison is done between MOS Current Mode Logic (MCML) and Complementary metal Oxide Semiconductor (CMOS) circuits operating in low power application. It is found that MCML logic circuits exhibit a decrease in delay and so decrease in overall power delay product compared with CMOS circuits. The tested inverter are optimized for low power and high-speed operation, according to the simulation of the circuits for lower voltage. This simulation is done using Tanner EDA. From the results shown it is seen that the MCML logic circuits reveal high efficiency and good performance at low power and high speeds which makes them to be more capable for application in the integrated circuits with high density.

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