III. X-RAY MICRO-LITHOGRAPHY AND THICK RESIST STUDIES AT CAMD

Abstract

CAMD (Center for Advanced Microstructures and Devices) utilizes the radiation from a 1.2-1.5GeV electron storage ring with a critical-wavelength range 9.5-4.8Å. The storage ring at CAMD provides suitable radiation for X-ray micro-lithography and microfabrication work. High resolution, thin and thick resist processing techniques, including resist application, exposure and development were explored. New techniques such as transfer mask and equivalent filtration are introduced and demonstrated. Issues of latent image formation in exposed resist are addressed. Examples of structures fabricated using described techniques are presented.